• Title of article

    Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering

  • Author/Authors

    Hsin-Yi Lee، نويسنده , , C.-H. Hsu، نويسنده , , Y.-W. Hsieh، نويسنده , , Yen-Hua Chen، نويسنده , , Yuan-Chang Liang، نويسنده , , Tai-Bor Wu، نويسنده , , L.J Chou، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2005
  • Pages
    6
  • From page
    585
  • To page
    590
  • Abstract
    High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (STO) substrates with RF-magnetron sputtering deposition at substrate temperatures in a range 150–650 °C. Azimuthal scans around the surface Bragg peak of the film and lattice images from a high-resolution transmission electron microscope (HRTEM) show that a well epitaxial relationship between film and substrate is achievable through RF sputtering growth. BaTiO3/SrTiO3 (BTO/STO) artificial superlattices subsequently deposited on LNO-coated STO substrates with RF sputtering were found also to have a large dielectric constant and a small dissipation factor.
  • Keywords
    X-ray scattering , RF magnetron sputtering , Grazing-incidence X-ray diffraction , Artificial superlattices , Dielectric constant
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2005
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1063609