Title of article :
Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering
Author/Authors :
Hsin-Yi Lee، نويسنده , , C.-H. Hsu، نويسنده , , Y.-W. Hsieh، نويسنده , , Yen-Hua Chen، نويسنده , , Yuan-Chang Liang، نويسنده , , Tai-Bor Wu، نويسنده , , L.J Chou، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2005
Abstract :
High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (STO) substrates with RF-magnetron sputtering deposition at substrate temperatures in a range 150–650 °C. Azimuthal scans around the surface Bragg peak of the film and lattice images from a high-resolution transmission electron microscope (HRTEM) show that a well epitaxial relationship between film and substrate is achievable through RF sputtering growth. BaTiO3/SrTiO3 (BTO/STO) artificial superlattices subsequently deposited on LNO-coated STO substrates with RF sputtering were found also to have a large dielectric constant and a small dissipation factor.
Keywords :
X-ray scattering , RF magnetron sputtering , Grazing-incidence X-ray diffraction , Artificial superlattices , Dielectric constant
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics