Preparation and characterization of indium selenide thin films from a chemical route

The growth of nanocrystalline indium selenide thin films by using a modified chemical bath deposition method was studied. In order to obtain the indium selenide thin films, the preparative conditions, such as concentration, pH of cationic precursors, adsorption, reaction and rinsing time duration were optimized. The growth of the thin films was found to be 6.3 nm per cycle. The films were characterized by various experimental methods for structural, surface morphological, compositional, optical and electrical properties. The films were nanocrystalline and showed the phases InSe, In2Se3 and In6Se7. The surface of the film was rough. The absorbance of the film was found to be high (104 cm−1) and the optical band gap was 2.5 eV. The electrical resistivity was of the order of 106 Ω cm with n-type electrical conductivity.