Structure and current-induced effect on the resistivity of La2CoMnO6 thin films

Polycrystalline double perovskite La2CoMnO6 thin films are successfully deposited on Si(1 0 0) substrates via chemical solution deposition method. Their structural, electrical and magnetic properties are measured. All films are single phase and polycrystalline with monoclinic structures. The temperature variation of resistivity of the thin films annealed at different temperatures shows that the resistivity decreases with the increase of crystalline quality. For the films annealed at 1073 K, a typical dependence of resistivity on temperature under different currents displays that the resistivity decreases with the increased current. A magnetoresistivity of ∼25% is found at 40 K in an applied field of 8 kOe and MR has positive sign. Large negative current resistivity is observed close to room temperature.