Title of article :
Effect of sulfurization temperature on the surface roughening, electrical and optical properties of FeS2 films deposited by sol–gel method
Author/Authors :
Feng Wang، نويسنده , , Liuyi Huang، نويسنده , , Zhaoju Luan، نويسنده , , Jisheng Huang، نويسنده , , Liang Meng، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2012
Pages :
4
From page :
505
To page :
508
Abstract :
FeS2 films were prepared by sulfurizing precursive Fe2O3 films at different temperatures. The structural and photoelectrical characters were determined. According to these results, precursive Fe2O3 sulfurized at temperatures 400–600 °C could transform into FeS2 films. The RMS roughness decreases in the low temperature period from 300 to 400 °C and then increases by further increasing the temperature. The changes of surface roughness can be attributed to the different interactions of surface energy and interface energy at different sulfurization temperatures. The optical and electrical properties of the films depend mainly on the changes of the density of crystal defects and the microstructure. With the sulfurization temperature increasing, the optical absorption coefficient and band gap decrease while the electrical resistivity increases.
Keywords :
Thin films , Atomic force microscopy (AFM) , Electrical properties , Optical properties
Journal title :
Materials Chemistry and Physics
Serial Year :
2012
Journal title :
Materials Chemistry and Physics
Record number :
1063986
Link To Document :
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