Title of article :
Embedding and electropolymerization of terthiophene derivatives in porous n-type silicon
Author/Authors :
Diyana Badeva، نويسنده , , François Tran-Van، نويسنده , , Layla Beouch، نويسنده , , Claude Chevrot، نويسنده , , Ivania Markova، نويسنده , , Todora Racheva، نويسنده , , Gérard Froyer، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2012
Pages :
7
From page :
592
To page :
598
Abstract :
A mesoporous n-type silicon/poly (3′-acetic acid-2,2′-5′,2′′ terthiophene)–(Poly (3TAA) nanocomposite was elaborated in order to realize new components for optoelectronics. Non-oxidized and oxidized porous silicon substrates is used and their physical and chemical properties have been studied by different techniques such as transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FTIR). Terthiophene based conjugated structure has been successfully incorporated inside the pores by capillarity at the melting temperature of the monomer. The filling of the monomer into the porous volume was probed by energy dispersive X-ray spectroscopy (EDX). Polarized infrared absorption spectroscopy results indicated that the monomer molecules show preferential orientation along the pore axis, due to hydrogen bonding, in particular that of the carboxylic groups with silanol-rich oxidized porous silicon surface. The 3TAA monomer molecules embedded in porous silicon matrix were electrochemically polymerized in situ and resonance Raman scattering spectroscopy proved the above-mentioned polymerization.
Keywords :
Porous silicon , Terthiophene , Oxidation , Filling , polymerization , Nanocomposite
Journal title :
Materials Chemistry and Physics
Serial Year :
2012
Journal title :
Materials Chemistry and Physics
Record number :
1064170
Link To Document :
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