Title of article :
In situ synthesis of Si3N4 from Na2SiF6 as a silicon solid precursor
Author/Authors :
A.L. Leal-Cruz، نويسنده , , M.I. Pech-Canul، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
7
From page :
27
To page :
33
Abstract :
The aim of this investigation was to synthesize Si3N4 through the reaction of nitrogen with SiF4(g) produced during the thermal decomposition of sodium hexafluorosilicate (Na2SiF6) and based on an experiment design, optimize the processing conditions. The quantitative effect and the contribution of the processing parameters on the amount of Si3N4 formed was determined using analysis of variance (ANOVA). Results show that particles, whiskers/fibers and coatings of α and β-Si3N4 can be produced in the same reaction chamber where the silicon precursor (SiF4) is generated. The optimum conditions for maximum amount of Si3N4 formed are: 60 min, 1300 °C, N2–NH3, 17 mbar, a preform of 85 SiC:15 Si (wt.%) with 50% porosity, and a compact of Na2SiF6 of 25 g. The versatility for synthesizing Si3N4 with a variety of morphologies through an in situ process suggests the potential of the proposed route for the economic production of Si3N4.
Keywords :
Nitrides , Chemical vapor deposition (CVD) , Coatings
Journal title :
Materials Chemistry and Physics
Serial Year :
2006
Journal title :
Materials Chemistry and Physics
Record number :
1064414
Link To Document :
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