Title of article :
Thermal annealing effect on Y2O3:Eu3+ phosphor films prepared by yttrium 2-methoxyethoxide sol–gel precursor
Author/Authors :
M.K. Chong، نويسنده , , K. Pita، نويسنده , , C.H. Kam، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
4
From page :
329
To page :
332
Abstract :
In this work, we demonstrate that yttrium 2-methoxyethoxide is a convenient sol–gel precursor to synthesize the Y2O3:Eu3+ phosphor films. The crystallization of Y2O3:Eu3+ phosphor films prepared from the yttrium 2-methoxyethoxide occurs at about 550 °C. We have also observed that our Y2O3:Eu3+ phosphor films undergo crystal structure change above annealing temperature of 750 °C which is not previously observed in the sol–gel fabrication method. The change of photoluminescent (PL) spectra is related to the evolution of Y2O3 crystal structure. It is shown in this investigation that the post-annealing treatment will help to produce phosphor films of improved brightness. The reasons assigned are the effective elimination of OH impurities and the grain growth of phosphor films.
Keywords :
Photoluminescence spectroscopy , Optical materials , Sol–gel growth
Journal title :
Materials Chemistry and Physics
Serial Year :
2006
Journal title :
Materials Chemistry and Physics
Record number :
1064903
Link To Document :
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