Luminescent properties and excitation mechanism of ZnSe quantum dots embedded in ZnS Matrix

In this paper, we report alternative-current thin film electroluminescence structure with ZnSe quantum dots embedded in ZnS matrix as light-emitting center, i.e., ITO/SiOx (100 nm)/[ZnS (10 nm)/ZnSe (1 nm)]30/SiOx (100 nm)/Al. Blue emissions at 390 and 477 nm are obtained in its alternative-current electroluminescent spectra. By studying its luminescent spectroscopy and brightness oscillogram of the device, we found that blue emission came from defect states at ZnSe/ZnS interface and the excitation mechanism was hot-electron impact.