Title of article :
Incorporation of Ga into the structure of Ge–Se glasses
Author/Authors :
R. Golovchak، نويسنده , , L. Calvez، نويسنده , , E. Petracovschi، نويسنده , , B. Bureau، نويسنده , , D. Savytskii، نويسنده , , H. Jain، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2013
Pages :
8
From page :
909
To page :
916
Abstract :
The structure of Ga-containing Ge–Se glasses is studied by high-resolution X-ray photoelectron and extended X-ray absorption fine-structure spectroscopies. The results show that in GaxGeySe100–x–y glasses both Ga and Ge atoms are 4-fold coordinated, whereas Se atoms are 2-fold coordinated. For Se-deficit samples with Se content less than 67 at.%, Ge–Ge(Ga) bonds appear. First, Ge–Ge bonds are formed indicating preference for the formation of (Se)2 > Ga < (Se)2 units over the regular GeSe4/2 tetrahedra. Metal-Ga bonds appear only in the most Se-deficit sample. Addition of Ga facilitates more uniform Se distribution in comparison to binary Ge–Se or ternary As(Sb)–Ge–Se systems. The observed structural features are correlated with some basic thermo-mechanical properties of the investigated glasses.
Keywords :
Glasses , Energy spectroscopy for chemical analysis (ESCA) , XAFS (EXAFS and XANES) , Electronic structure
Journal title :
Materials Chemistry and Physics
Serial Year :
2013
Journal title :
Materials Chemistry and Physics
Record number :
1065151
Link To Document :
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