Title of article
Effect of lanthanum content and substrate strain on structural and electrical properties of lead lanthanum zirconate titanate thin films
Author/Authors
Sheng Tong، نويسنده , , Manoj Narayanan، نويسنده , , Beihai Ma، نويسنده , , Shanshan Liu، نويسنده , , Rachel E. Koritala، نويسنده , , Uthamalingam Balachandran، نويسنده , , Donglu Shi، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2013
Pages
4
From page
427
To page
430
Abstract
We investigated the structural, electrical properties of Pb1−xLax(Zr0.52Ti0.48)O3 (PLZT) thin films under tensile (Pt/Si) and compressive (LaNiO3/Ni) strain-states, respectively. The lattice parameter, grain size, remanent polarization of the thin films decreased with increasing La content. For identical compositions, the Curie temperature, remanent polarization, and coercive field were always higher for films on LaNiO3/Ni than Pt/Si. These suggest that the electrical properties of PLZT thin films can be tuned by altering the dopant level and substrate-induced strain levels.
Keywords
Ferroelectricity , Thin films , Sol-gel growth , Dielectric properties
Journal title
Materials Chemistry and Physics
Serial Year
2013
Journal title
Materials Chemistry and Physics
Record number
1065344
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