Title of article
Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O3 thin films obtained from the soft chemical method
Author/Authors
L.G.A. Marques، نويسنده , , L.S. Cavalcante، نويسنده , , A.Z. Simoes، نويسنده , , F.M Pontes، نويسنده , , L.S. Santos-J?nior، نويسنده , , M.R.M.C. Santos، نويسنده , , I.L.V. Rosa، نويسنده , , J.A. Varela، نويسنده , , E. Longo، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2007
Pages
5
From page
293
To page
297
Abstract
Ba(Zr0.25Ti0.75)O3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 °C for 4 h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz.
Keywords
BZT , Dielectric properties , Thin films , Temperature dependence
Journal title
Materials Chemistry and Physics
Serial Year
2007
Journal title
Materials Chemistry and Physics
Record number
1065666
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