Interfacial strengths of organosilicate glasses deposited on silicon wafers

The interfacial strengths of organosilicate glasses deposited on silicon wafer have been investigated. Three different testing methods, the microscratch test, four-point bending test, and the modified edge lift-off test, were used to determine the interfacial strengths between the inorganic C-doped organosilicate glass (OSG) and the silicon wafer. The results show that the adhesion energy decreases with increasing film thickness in the four-point bending and modified edge lift-off tests, but it increases as the thickness increases in the microscratch test. The difference in the trends is due to the different deformation modes operating in the testing processes.