Morphology variation in growth process of InN pillar crystal films on Si (1 0 0) substrate by halide chemical vapor deposition under atmospheric pressure

The morphology variation in growth process of InN films on Si (1 0 0) substrate by means of AP–HCVD investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray pole-figure. These results imply that the InN pillar crystal is grown perpendicular to Si (1 0 0) substrate with increasing growth time.