I(V) computational conduction model for a SiC-6H Schottky diode

A computational model has been developed in order to explain the anomalies observed in the direct SiC-6H I(V) characteristic diode. These irregularities consist in a thermionic, a generation–recombination, a tunnelling and a leakage electric current contributions. Two kinds of diodeʹs dimensions have been used. For the small one, a good fitting, at all temperatures has been obtained, but for the big one, the fitting was relatively bad, perhaps due to a so important parasite resistance versus potential variation. Even, a high parasite resistance has been encountered near room temperature.