Title of article :
Semiconductivities of Sn-doped In2O3 powder prepared by co-precipitation through ion exchange method
Author/Authors :
Xiebin Zhu، نويسنده , , Tao Jiang، نويسنده , , Guanzhou Qiu، نويسنده , , Boyun Huang، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Pages :
4
From page :
342
To page :
345
Abstract :
Sn-doped In2O3 (ITO) powder was prepared by co-precipitation through ion exchange method with the solution of InCl3 and SnCl4·5H2O under the condition of the different temperatures and different molar ratios of Sn to In. ITO precursor was analyzed by TG-DTA, and the morphology, phase composition and particle size of the powder were characterized by TEM and XRD. The effects of calcination temperature and molar ratio of Sn/In on the phase composition, particle size and conductivity were discussed. The results showed that the phase transformation occurs at a temperature of over 332 °C, and an ITO powder with perfect crystalline structure, minimum crystallite size, minimum powder resistance and the best conductivity can be prepared at the calcination temperature of 700 °C with 10% molar ratio of Sn/In.
Keywords :
Semiconductors , Precipitation , Semiconductivity , Electron microscopy (TEM)
Journal title :
Materials Chemistry and Physics
Serial Year :
2008
Journal title :
Materials Chemistry and Physics
Record number :
1066286
Link To Document :
بازگشت