Quenched-in lattice defects in pure aluminium (99.999%)

Prepared specimens of pure aluminium (99.999%) in the form of thin sheets of 100-μm thickness were used for electrical resistivity measurements. Samples were quenched after heating at different temperatures ranging from 373 to 723 K for 30 min. Samples were also annealed for a constant time of 30 min at different temperatures (373–673 K). It was observed that resistivity of pure aluminium increases with increase in temperature. The effect of annealing and quenching on electrical resistivity had also been observed. It was found that the room temperature resistivity increases with increase in quenching temperature but decreases after subsequent annealing at various temperatures. Increase in resistivity after quenching was found to be due to creation of defects and imperfections such as vacancies and dislocations etc. Decrease in resistivity after annealing can be attributed to recovery and recrystallization processes.