Author/Authors :
S.B.، Rafol, نويسنده , , S.، Datta, نويسنده , , O.V.، Sulima, نويسنده , , M.G.، Mauk, نويسنده , , Z.A.، Shellenbarger, نويسنده , , J.A.، Cox, نويسنده , , J.V.، Li, نويسنده , , P.E.، Sims, نويسنده ,
Abstract :
Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.
