Low threshold, high power and long lifetime InGaAsN/GaAs lasers

4 (mu)m stripe ridge waveguide InGaAsN lasers were processed. Pulsed (10 (mu)s, 1% duty) emission was up to 240 mW at 20(degree)C and 20 mW at 120(degree)C. The emission wavelength is around 1260 nm at RT. The threshold is 15 mA at 20(degree)C, corresponding to a threshold current density of 313 A/cm/sup 2/. For CW operation, the lasers show a very low threshold of 23 mA and the maximum output was up to 40 mW for a 1200 (mu)m length chip at RT. All the emission described was kink-free and single-mode. The laser with broad area (40 (mu)m stripe width) processing using the same material has been working under CW operation at constant current (80% of maximum output) for more than 15 500 devicehours at 30(degree)C and is still working well.