Title of article :
Frequency stabilisation of a GaAlAs semiconductor diode laser to an absorption line of water vapour at 822 nm
Author/Authors :
A.، Ray نويسنده , , A.، Bandyopadhyay, نويسنده , , B.، Ray, نويسنده , , P.N.، Ghosh, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
-48
From page :
49
To page :
0
Abstract :
An inexpensive GaAlAs single mode semiconductor diode laser operating in the 822 nm wavelength region is frequency stabilised at the line centre of a transition in the (2,1,1) vibration-rotation band of water vapour. A balanced photodetector is used for recording to improve the signal/noise (S/N) ratio. The laser frequency is locked at the line centre by using a simple currentfeedback servocircuit. A long-term laser frequency stability of ~4 MHz is attained, which is more than a hundred-fold improvement over the performance provided by the free running semiconductor diode laser. The corresponding Allan-variance measurement reaches (sigma)( (tau))=8.0 * 10/sup -12/ for an integration time of 100 s.
Keywords :
Quantum dots , Fluorescence resonance energy transfer , immunoglobulin G
Journal title :
IEE PROCEEDINGS OPTOELECTRONICS
Serial Year :
2004
Journal title :
IEE PROCEEDINGS OPTOELECTRONICS
Record number :
106753
Link To Document :
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