Author/Authors :
A.، Forchel, نويسنده , , D.، Gollub, نويسنده , , M.، Kamp, نويسنده , , A.، Neumann, نويسنده , , A.، Patane, نويسنده , , L.، Eaves, نويسنده , , A.E.، Belyaev, نويسنده ,
Abstract :
Magneto-transport studies in an n-i-n doped GaAs/AlAs/Ga(AsN) heterostructure are described. This system acts as a resonant-tunnelling diode in which electrons can tunnel through the N-induced states in the Ga(AsN) layer. Magnetotunnelling spectroscopy with magnetic fields parallel and perpendicular to the current direction is used to probe the nature, band-like or impurity-like, of the N states. The data indicate that the electron wavefunction of the N states is strongly localised and extends over distances smaller than 1.8 nm.
