Author/Authors :
P.، Sewell, نويسنده , , T.M.، Benson, نويسنده , , S.، Sujecki, نويسنده , , L.، Borruel, نويسنده , , J.، Wykes, نويسنده , , I.، Esquivias, نويسنده , , E.C.، Larkins, نويسنده , , A.، Vukovic, نويسنده ,
Abstract :
The properties of a tapered semiconductor laser cavity, which can be used to generate a high-brightness optical beam, are studied. The cavity consists of a narrow straight waveguide section and a tapered power amplifier section. The influence of the input waveguide width and length, as well as of the length and taper angle of the power amplifier section, on the overall performance of the cavity are discussed. Finally, the application of beam spoilers is studied. In order to solve the wave equation, the wide-angle-beam propagation method incorporating a higher-order finite-difference scheme is applied.
