Optically pumped lead-chalcogenide IR-emitters

Two types of infrared emitters realised with IV-VI (lead chalcogenide) narrow-gap semiconductor materials on Si substrates are described. First, edge-emitting PbSe quantum well lasers with Pb/sub 1-x/Eu/sub x/ Se claddings are grown on a BaF/sub 2/ buffer layer on Si[100] substrates, removed from the substrate by dissolving the buffer layer and cleaved into resonator structures. Lasing around 4-5 (mu)m wavelength is observed up to 240 K when illuminating with about 5W/sub p/ from a 900 nm pumplaser-diode. Secondly, a resonant cavity PbSe/Pb/sub 1-x/Eu/sub x/ Se structure on Si[111] with a one or two-pair BaF/sub 2//Pb/sub 1-y/Eu/sub y/Se bottom mirror and a three-pair BaF/sub 2//EuSe top mirror exhibiting emission at e.g. 4.1 (mu)m and 4% line-width, operates at room temperature and is tunable by design.