Author/Authors :
I.، Vurgaftman, نويسنده , , J.R.، Meyer, نويسنده , , H.، Lee, نويسنده , , W.W.، Bewley, نويسنده , , D.G.، Gevaux, نويسنده , , A.M.، Green, نويسنده , , C.C.، Phillips, نويسنده , , C.L.، Felix, نويسنده , , R.U.، Martinelli, نويسنده ,
Abstract :
Recent studies suggest that the radiative conversion efficiency of mid-infrared semiconductor devices is limited by non-radiative Auger mechanisms. Band structure engineering techniques, such as the introduction of strain or the use of type-II band offset materials, have been shown to reduce the effect of Auger recombination. Results from light emitting diodes (LEDs) with an active region consisting of ten InAs/GaInSb/InAs/AlGaAsSb type-II ʹWʹ quantum wells grown by molecular beam epitaxy (MBE) on GaSb substrates are described. At room temperature, the device was characterised by a slope efficiency of 98 (mu)W/A at low currents, which dropped at higher currents due to heating. This corresponded to an internal efficiency of approximately 2.6%.
