Title of article :
Normal-incidence intersubband absorption in AlGaSb quantum wells: enhanced oscillator strength and new functionalities using asymmetry
Author/Authors :
V.، Berger, نويسنده , , C.، Alibert, نويسنده , , J.M.، Jancu, نويسنده , , P.، Senellart, نويسنده , , E.، Peter, نويسنده , , F.، Chevrier, نويسنده , , A.، Joullie, نويسنده , , O.، Krebs, نويسنده , , P.، Voisin, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-380
From page :
381
To page :
0
Abstract :
The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp/sup 3/ d/sup 5/ s/sup */ tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.
Keywords :
Distributed systems
Journal title :
IEE PROCEEDINGS OPTOELECTRONICS
Serial Year :
2003
Journal title :
IEE PROCEEDINGS OPTOELECTRONICS
Record number :
106848
Link To Document :
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