Author/Authors :
V.K.، Malyutenko, نويسنده , , K.V.، Michailovskaya, نويسنده , , O.Yu.، Malyutenko, نويسنده , , V.V.، Bogatyrenko, نويسنده , , D.R.، Snyder, نويسنده ,
Abstract :
The pixelless dynamic scene projector successful in generating high-speed (microsecond range) broadband infrared ((planck)(omega)E/sub g/ of a semiconductor screen was developed, fabricated, and tested. The device operation principle is based on a possibility of dynamically modulating the apparent temperature (or power emitted in the spectral range of free carrier absorption-emission processes) of an image optically generated on a semiconductor screen (light down-conversion process). The device successfully monitors both hot and cold images (compared to a scene temperature) as well as erase-image and displayhidden-image processes. The results of an experimental study of a germanium screen (300 K < T < 500 K) in the 8-12 (mu)m spectral range are reported for the first time.