Crystallization mechanisms of (In15Sb85)100−xBix phase change recording thin film

The (In15Sb85)100−xBix films (x = 0–18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In15Sb85)100−xBix film (x = 0–18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In15Sb85)100−xBix films was amorphous and it would transform to Sb, InSb, Bi, and BiIn2 coexisting phases after annealing at 250 °C for 30 min.