Title of article :
Magnetic properties and microstructure of TbCo/(SiNx/Co)n films
Author/Authors :
G.P. Lin، نويسنده , , P.C. Kuo، نويسنده , , P.L. Lin، نويسنده , , K.T. Huang، نويسنده , , C.L. Shen، نويسنده , , T.L. Tsai، نويسنده , , S.L. Ou، نويسنده , , S.C. Chen، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2010
Pages :
3
From page :
1734
To page :
1736
Abstract :
The Tb32Co68/(SiNx/Co)n films (n = 0 – 3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥) of the Tb32Co68/(SiNx/Co)3 film are 263 emu/cm3 and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc⊥ values are profoundly influenced by the interface roughness.
Journal title :
Materials and Design
Serial Year :
2010
Journal title :
Materials and Design
Record number :
1068804
Link To Document :
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