Title of article
InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
Author/Authors
M.، Kauer, نويسنده , , K.، Johnson Marcia نويسنده , , S.E.، Hooper, نويسنده , , V.، Bousquet, نويسنده , , J.M.، Barnes, نويسنده , , J.، Heffernan, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-32
From page
33
To page
0
Abstract
The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ~30 kA cm/sup -2/.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
106972
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