Author/Authors :
R.، Coffie, نويسنده , , S.، Keller, نويسنده , , S.، Heikman, نويسنده , , A.، Chini, نويسنده , , U.K.، Mishra, نويسنده , , D.، Buttari, نويسنده ,
Abstract :
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.
