Author/Authors :
Q.، Chen, Y. نويسنده , , T.، KIMURA نويسنده , , J.E.، Bowers, نويسنده , , C.، Wang, نويسنده , , E.S.، Bjorlin, نويسنده ,
Abstract :
Vertical cavity semiconductor optical amplifiers operating at 1540 nm are presented. The use of AlInGaAs multiple quantum well active regions resulted in record-high saturation output power of +0.5 dBm and 16 dB of fibre-to-fibre gain. These results were achieved in reflection mode operation using optical pumping by a 980 nm semiconductor laser.
