Author/Authors :
Agarwal، A نويسنده , , H.-J.L.، Gossmann, نويسنده , , A.S.، Perel, نويسنده ,
Abstract :
PMOS transistors with coded gate-lengths down to 100 nm have been fabricated using either 5.6 keV 2*10/sup 13/ cm/sup -2/ decaborane (B/sub 10/H/sub 14/) or 0.5 keV 2*10/sup 14/ cm/sup -2/ elemental B for the extension implant. DC device characteristics are essentially identical between the two implant processes, indicating that decaborane is a viable alternative to elemental B in this area.
