Low-noise silicon carbide X-ray sensor with wide operating temperature range

A silicon carbide (SiC) sensor is presented with high energy resolution in X-ray spectroscopy over a wide temperature range (27-100(degree)C). The sensor, consisting of a Schottky barrier diode on high resistivity epitaxial SiC, is characterised by an extremely low noise due to its ultra-low reverse current density even at high operating temperature (15 pA/cm/sup 2/ at 27(degree)C and 0.5 nA/cm/sup 2/ at 100(degree)C). Equivalent noise charges as low as 17 electrons rms at 27(degree)C and 47 electrons rms at 100(degree)C have been measured, allowing X-ray spectroscopy with an energy resolution as low as 315 eV and 797 eV FWHM, respectively.