1.3 (mu)m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy

A highly strained GaAs/GaAs/sub 0.64/Sb/sub 0.36/ single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 (mu)m pulsed operation with a low threshold current density of 300 A/cm/sup 2/. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.