Title of article
1.3 (mu)m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
Author/Authors
H.-H.، Lin, نويسنده , , P.-W.، Liu, نويسنده , , G.-H.، Liao, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-176
From page
177
To page
0
Abstract
A highly strained GaAs/GaAs/sub 0.64/Sb/sub 0.36/ single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 (mu)m pulsed operation with a low threshold current density of 300 A/cm/sup 2/. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107066
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