Title of article
Low threshold current density 1.3 (mu)m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
Author/Authors
F.Y.، Chang, نويسنده , , J.D.، Lee, نويسنده , , H.H.، Lin, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-178
From page
179
To page
0
Abstract
InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy (MBE) are reported. The laser emits 1.296 (mu)m light output and demonstrates a very low threshold current density of 111 A/cm/sup 2/. This is the lowest reported value of GaAs-based 1.3 (mu)m quantum dot lasers with InGaP cladding layers.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107067
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