Author/Authors :
A.D.، Stiff-Roberts, نويسنده , , S.، Chakrabarti, نويسنده , , P.، Bhattacharya, نويسنده , , S.W.، Kennerly, نويسنده ,
Abstract :
The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, R/sub p/=2.5 A/W, is measured at T=78K for V/sub bias/=-1.5 V. A dark current density as low as 3.2*10/sup -4/ A/cm/sup 2/ for V/sub bias/=-2.0 V is also measured at T=300K.
