Author/Authors :
Y.، Takahashi, نويسنده , , Y.، Ono, نويسنده , , H.، Inokawa, نويسنده , , A.، Fujiwara, نويسنده , , K.، Nishiguchi, نويسنده ,
Abstract :
A multilevel single-electron memory has been successfully demonstrated. Two fine gates with phase-shifted pulse voltages modulate potential barriers in a one-dimensional Si channel to transfer electrons one by one into a memory node, and the number of electrons in the node is sensed by a single-electron transistor.
