Title of article :
Numerical analysis of LEC growth of GaAs with an axial magnetic field
Author/Authors :
Mingwei Li، نويسنده , , Wenrui Hu، نويسنده , , Nuohu Chen، نويسنده , , Danling Zeng، نويسنده , , Zemei Tang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
9
From page :
2843
To page :
2851
Abstract :
A set of numerical analyses for momentum and heat transfer for a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without an axial magnetic field was carried out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar flows. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier–Stokes equations for both melt and encapsulant and electric current stream function equations for melt and crystal are considered together and solved simultaneously. The effect of the thickness of encapsulant, the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated.
Keywords :
Finite-element method , Boron oxide , Liquid Encapsulant Czochralski (LEC) , Growth of GaAs , Magnetic field
Journal title :
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
Serial Year :
2002
Journal title :
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
Record number :
1071002
Link To Document :
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