Title of article
1530 V, 16.8 m(omega) . cm/sup 2/, 4H-SiC normally-off vertical junction field-effect transistor
Author/Authors
J.H.، Feng Yan Zhao, نويسنده , , M.، Weiner, نويسنده , , L.G.، Fursin, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-26
From page
27
To page
0
Abstract
The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 (mu)m using a two-step junction termination extension. The VJFET shows a low specific on-resistance R/sub ON_SP/ of 16.8 m(omega) . cm/sup 2/.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107126
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