Author/Authors :
L.F.، Eastman, نويسنده , , M.G.، Spencer, نويسنده , , H.-Y.، Cha, نويسنده , , Y.C.، Choi, نويسنده ,
Abstract :
A cascode model is proposed to analyse current-voltage and cutoff frequency characteristics of the buried-gate device. A high saturation current of the buried-gate device is associated with the short channel FET representing the buried region. Two unsaturated side FETs result in a relatively lower cutoff frequency of the buried-gate device compared to the gate-recessed one.
