Author/Authors :
M.، Tanaka, نويسنده , , D.، Navarro, نويسنده , , M.، Taguchi, نويسنده , , T.، Ohguro, نويسنده , , M.، Miura-Mattausch, نويسنده , , H.J.، Mattausch, نويسنده , , N.، Nakayama, نويسنده , , H.، Ueno, نويسنده , , S.، Kumashiro, نويسنده , , T.، Kage, نويسنده , , S.، Miyamoto, نويسنده ,
Abstract :
A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.
