Title of article
Non-quasi-static model for MOSFET based on carrier-transit delay
Author/Authors
M.، Tanaka, نويسنده , , D.، Navarro, نويسنده , , M.، Taguchi, نويسنده , , T.، Ohguro, نويسنده , , M.، Miura-Mattausch, نويسنده , , H.J.، Mattausch, نويسنده , , N.، Nakayama, نويسنده , , H.، Ueno, نويسنده , , S.، Kumashiro, نويسنده , , T.، Kage, نويسنده , , S.، Miyamoto, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-275
From page
276
To page
0
Abstract
A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107130
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