Author/Authors :
A.، Syrbu, نويسنده , , A.، Mereuta, نويسنده , , A.، Mircea, نويسنده , , A.، Caliman, نويسنده , , V.، Iakovlev, نويسنده , , C.-A.، Berseth, نويسنده , , G.، Suruceanu, نويسنده , , A.، Rudra, نويسنده , , E.، Deichsel, نويسنده , , E.، Kapon, نويسنده ,
Abstract :
Wafer-fused InGaAlAs/AlGaAs vertical cavity surface emitting lasers with InAlGaAs-based tunnel junction injection have shown record high 0.7 mW singlemode output power in the 10-80(degree)C temperature range. Single transverse-mode operation with 35 dB sidemode suppression and low divergence beam with 9(degree) half width at half maximum has been measured on devices with 7 (mu)m aperture.
