Title of article :
Partly three-dimensional global modeling of a silicon Czochralski furnace. II. Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field
Author/Authors :
Lijun Liu، نويسنده , , Koichi Kakimoto، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
4492
To page :
4497
Abstract :
A three-dimensional (3D) global analysis was carried out numerically for a small silicon Czochralski (CZ) furnace in a transverse magnetic field by a proposed 3D global model. The modeling was conducted with moderate requirements of computer resources and computation time. Most 3D features of the melt flow and thermal field in the furnace could be reproduced in the modeling. The results showed that the melt–crystal interface shape is three-dimensional and temperature difference over the circumference on the crystal and crucible sidewalls is prominent. The non-uniformity of temperature in the azimuthal direction decreases with increase in distance from the melt region. The influence of a transverse magnetic field on the flow pattern of melt and global thermal field in the furnace was analyzed.
Keywords :
Global modeling , Semiconducting silicon , Transverse magnetic field , computer simulation , Czochralski method
Journal title :
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
Serial Year :
2005
Journal title :
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
Record number :
1072283
Link To Document :
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