Spin-polarised quantum dot light-emitting diodes with high polarisation efficiency at high temperatures

Light-emitting diode heterostructures with 150 nm Ga/sub 0.95/Mn/sub 0.05/As spin injector layers and In/sub 0.4/Ga/sub 0.6/As quantum dot active regions were grown and fabricated into 600 (mu)m diameter mesa-shaped surface-emitting devices. Polarised light at 1.05 (mu)m is observed with an output polarisation efficiency of 30% and record high temperature operation.