Title of article :
Packaged single-ended CMOS low noise amplifier with 2.3 dB noise figure and 64 dBm IIP/sub 2/
Author/Authors :
Z.، Li, نويسنده , , K.K.، O, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
-711
From page :
712
To page :
0
Abstract :
A single-ended low noise amplifier (LNA) implemented in a foundry 0.18 (mu)m CMOS process is tested on a PC board using the chip-on-board technique. The measured S/sub 11/ and S/sub 22/ are less than -10 dB over 5.15-5.35 GHz, which is the lower subband of UNII and HIPERLAN/2 band. The measured noise figure is 2.0 dB and power gain is 15.5 dB at 5.15 GHz, while drawing 5.8 mA of current from a 1.8 V supply. The measured IIP/sub 2/ is greater than 64 dBm. This extremely high IP/sub 2/ is due to the tuned response of the LNA. The LNA is suitable for WLAN applications in the lower UNII and HIPERLAN/2 subband.
Keywords :
Hydrograph
Journal title :
IEE Electronics Letters
Serial Year :
2004
Journal title :
IEE Electronics Letters
Record number :
107416
Link To Document :
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