Title of article
Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines
Author/Authors
C.Y.، Li, نويسنده , , P.D.، Foo, نويسنده , , L.Y.، Yang, نويسنده , , D.H.، Zhang, نويسنده , , S.Y.، Wu, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-728
From page
729
To page
0
Abstract
An additional dielectric barrier layer SiCN was deposited on the sidewalls prior to Ta(N) metal barrier deposition. It was found that the leakage decreased with three to four orders of magnitude and breakdown voltage increased 200% compared with that without SiCN layer after burn-in at 200(degree)C for 40 h.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107427
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