Author/Authors :
J.G.، Kim, نويسنده , , G.L.، Belenky, نويسنده , , L.، Shterengas, نويسنده , , R.U.، Martinelli, نويسنده , , A.، Gourevitch, نويسنده ,
Abstract :
High-power 2.3 (mu)m In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 (mu)m-wide elements on a 1 cm-long bar generated 10 W in continuouswave (CW) mode and 18.5 W in quasi-CW mode (30 (mu)s/300 Hz) at a heatsink temperature of 18(degree)C.
