Title of article
High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates
Author/Authors
H.، Ishikawa, نويسنده , , S.، Sugitani, نويسنده , , K.، Shiojima, نويسنده , , T.، Makimura, نويسنده , , T.، Kosugi, نويسنده , , N.، Shigekawa, نويسنده , , T.، Egawa, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-774
From page
775
To page
0
Abstract
The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7*300 (mu)m gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107457
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