Author/Authors :
Y.C.، Lin, نويسنده , , E.Y.، Chang, نويسنده , , G.J.، Chen, نويسنده , , H.M.، Lee, نويسنده , , G.W.، Huang, نويسنده , , D.، Biswas, نويسنده , , C.-Y.، Chang, نويسنده ,
Abstract :
A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
