Polarisation-switching-induced resistance change in ferroelectric Mg-doped LiNbO/sub 3/ single crystals

Reversible resistance change at room temperature by polarisation switching is reported in ferroelectric single crystals. Resistance switching up to six orders of magnitude in Mg-doped LiNbO/sub 3/ was found. The resistance change is caused by the polarisation switching and increases with Mg concentration. Based on these results, continuous switching properties and memory behaviours were demonstrated.