Author/Authors :
J.-H.، Kim, نويسنده , , O.-K.، Kwon, نويسنده , , H.-W.، Song, نويسنده , , W.S.، Han, نويسنده , , Y.-G.، Ju, نويسنده , , J.-H.، Lee, نويسنده , , S.-H.، KoPark, نويسنده , , S.-G.، Kang, نويسنده ,
Abstract :
A a 1.55 (mu)m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al/sub 2/O/sub 3//a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.
